BUL38D high voltage fast-switching npn power transistor n stm preferred salestype n high voltage capability n low spread of dynamic parameters n minimum lot-to-lot spread for reliable operation n low base-drive requirements n very high switching speed n fully characterised at 125 o c n high ruggedness n integrated antiparallel collector-emitter diode applications n electronic transformers for halogen lamps n switch mode power supplies description the BUL38D is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage withstand capability. the bul series is designed for use in lighting applications and low cost switch-mode power supplies. ? internal schematic diagram june 1998 absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be = 0) 800 v v ceo collector-emitter voltage (ib = 0) 450 v v ebo emitter-base voltage (ic = 0) 9 v i c collector current 5 v i cm collector peak current (t p <5 ms) 10 a i b base current 2 a i bm base peak current (t p <5 ms) 4 a p tot total dissipation at tc = 25 o c80w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 2 3 to-220 1/6
thermal data r thj-case r t hj- amb thermal resistance junction-case max thermal resistance junction-ambient max 1.56 62.5 o c/w o c/w electrical characteristics (t case =25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be =0) v ce =800v v ce =800v t j =125 o c 100 500 m a m a i ceo collector cut-off current (i b =0) v ce =450v 250 m a v ceo(sus) collector-emitter sustaining voltage i c = 100 ma l = 25 mh 450 v v ebo emitter-base voltage (i c =0) i e =10ma 9 v v ce(sat) * collector-emitter saturation voltage i c =1a i b =0.2a i c =2a i b =0.4a i c =3a i b =0.75a 0.5 0.7 1.1 v v v v be(s at) * base-emitter saturation voltage i c =1a i b =0.2a i c =2a i b =0.4a 1.1 1.2 v v h fe * dc current gain i c =2a v ce =5v group a group b i c =10ma v ce =5v 8 13 22 10 23 32 t s t f inductive load storage time fall time i c =2a i b1 =0.4a v be(off) =-5v r bb =0 w v cl = 250 v l = 200 m h 1 55 1.8 100 m s ns t s t f inductive load storage time fall time i c =2a i b1 =0.4a v be(off) =-5v r bb =0 w v cl = 250 v l = 200 m h t j = 125 o c 1.3 100 m s ns v f diode forward voltage i c =2a 2.5 v * pulsed: pulse duration = 300 m s, duty cycle 1.5 % note : product will be pre-selected in dc current gain (group a and group b) starting from august '98 datacode. sgs-thomson reserves the right to ship either groups according to production availability. please contact your nearest sgs thomson microelectronics sales office for delivery details. safe operating areas reverse biased soa BUL38D 2/6
derating curve dc current gain base emitter saturation voltage dc current gain collector emitter saturation voltage inductive storage time BUL38D 3/6
(1) fast electronic switch (2) non-inductive resistor (3) fast recovery rectifier inductive fall time rbsoa and inductive load switching test circuit BUL38D 4/6
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 p011c to-220 mechanical data BUL38D 5/6
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 1998 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. . BUL38D 6/6
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